SiGe HBT超自对准结构模拟研究  

An Investigation into Simulation of SiGe HBT’s with Super Self-Aligned Selectively Grown Base

作　　者：黄大鹏[1] 戴显英[1] 张鹤鸣[1] 王伟[1] 吴建伟[1] 胡辉勇[1] 张静[2] 刘道广[2] 

机构地区：[1]西安电子科技大学微电子学院,陕西西安710071 [2]模拟集成电路国家重点实验室,重庆400060

出　　处：《微电子学》2005年第4期329-331,共3页Microelectronics

基　　金：模拟集成电路国家重点实验室基金资助项目(51439010101DZ01)

摘　　要：侧墙厚度及悬梁长度是SiGeHBT超自对准器件工艺中的重要结构参数,对器件的寄生效应和结面积有一定的影响,因而也影响器件的电流放大系数β和特征频率ft。在目前的文献中,尚未见到有关SiGeHBT超自对准结构模拟的报道。文章在研究各种超自对准技术的基础上,给出了SiGeHBT超自对准器件的优化结构。利用二维器件模拟软件MEDICI,对该结构中的侧墙及悬梁进行了模拟研究。结果表明,侧墙厚度对器件的频率特性影响较大,而对直流放大倍数β影响较小;悬梁长度在仿真的参数范围内对器件的直流放大特性和特征频率都影响不大。Sidewall thickness and overhanging length are crucial parameters in super self-aligned technology for SiGe HBT＇s. The two parameters have certain influence on the parasitic effect and junction area of the device, thus affecting the current amplifying factor β and characteristic frequency ft. An optimized structure of super self-aligned SiGe HBT is described based on our research of different super self-aligned technologies. Simulations are made on sidewall and overhanging in the super self-aligned structure using the 2-D simulator MEDICI. Results from the simulation indicate that the sidewall thickness have greater impact on f, ,but its impact on β is smaller, while the overhanging length has little effect on both f, and β.

关 键 词：硅锗异质结双极晶体管 自对准 侧墙 悬梁 

分 类 号：TN304.24[电子电信—物理电子学] TN322.8