刻蚀端面AlGaInAs/AlInAs激光器的制作与特性  

Etched-Facet AlGaInAs/AlInAs Semiconductor Laser Fabricated by Cl_2/BCl_3/CH_4 Inductively Coupled Plasma

作　　者：王健[1] 熊兵[1] 孙长征[1] 郝智彪[1] 罗毅[1] 

机构地区：[1]清华大学电子工程系集成光电子国家重点实验室,北京100084

出　　处：《中国激光》2005年第8期1031-1034,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金(60223001;60244001;60290084);国家863计划(2001AA312190;2002AA311192);国家973计划(G2000-03-6601)资助项目。

摘　　要：利用Cl2/BCl3/CH4电感应耦合等离子体(ICP)干法刻蚀技术,实现了对AlGaInAs,InP材料的非选择性刻蚀。AlGaInAs与InP的刻蚀速率分别为820nm/min与770nm/min,获得了刻蚀深度为4.9μm,垂直光滑的AlGaInAs/AlInAs激光器的刻蚀端面。在此基础上制作出宽接触的刻蚀端面AlGaInAs/AlInAs激光器,实现了室温脉冲激射,其阈值电流和微分量子效率与传统的解理端面激光器基本相当。并通过刻蚀端面与解理端面激光器特性的比较(包括电流-电压、电流-输出光功率以及远场特性),分析了刻蚀端面的引入对激光器特性的影响。Nonselective dry etching of the facet of AlGaInAs／AlInAs laser has been demonstrated by using Cl2/BCl3/CH4 inductively coupled plasma （ICP）， The etching rates of AlGaInAs and InP material were 820 and 770 nm/min. Vertical and smooth etched facet of AlGaInAs／AlInAs laser with 4.9μm-deep has been achieved. Board-areae tched-facet AlGaInAs／AlInAs semiconductor lasers have been fabricated with threshold current and slope efficiency almost equal to that of cleaved-facet lasers， The effects of etched facet on semiconductor laser have been analyzed by comparison the V-I, P-I characteristics and far field distribution between etched-facet and traditional cleaved-facet semiconductor laser。

关 键 词：激光技术 刻蚀端面激光器 ALGAINAS Cl2/BCl3/CH4 感应耦合等离子体 

分 类 号：TN248.4[电子电信—物理电子学]