纳米晶粒团聚GaN纳米线A_1(LO)Raman峰的非对称展宽  

Asymmetric Broadening of A_1(LO) Raman Peak of Nanocrystal Aggregated GaN Nanowires

作　　者：陈伊鸣[1] 王冠中[1] 韩新海[1] 李大鹏[1] 谢兴[1] 王清涛[1] 

机构地区：[1]中国科学技术大学结构分析开放实验室,物理系合肥230026

出　　处：《Chinese Journal of Chemical Physics》2005年第4期465-468,共4页化学物理学报（英文）

基　　金：ProjectsupportedbytheNationalNaturalScienceFoundationofChina(60376008)

摘　　要：Novel GaN nanowires were synthesized by a chemical vapor deposition (CVD) method. The morphology and structure of the nanowires were investigated by SEM, XRD and Raman spectra. Results show that GaN nanowires are formed by aggregated GaN nanocrystals, which is due to the non-uniform precipitation of GaN from catalyst droplet. An asymmetric broadening and shifting to lower frequency of A1(LO) peak are observed in the Raman spectra, which mainly contribute to the Fano interference between scattering from the k=0 optic phonon and electronic continuum scattering from laser-induced electrons.Novel GaN nanowires were synthesized by a chemical vapor deposition （CVD） method. The morphology and structure of the nanowires were investigated by SEM, XRD and Raman spectra. Results show that GaN nanowires are formed by aggregated GaN nanocrystals, which is due to the non-uniform precipitation of GaN from catalyst droplet. An asymmetric broadening and shifting to lower frequency of A1 （LO） peak are observed in the Raman spectra, which mainly contribute to the Fano interference between scattering from the k = 0 optic phonon and electronic continuum scattering from laser-induced electrons.

关 键 词：CVD GAN 纳米线 Fano共振 

分 类 号：TB383[一般工业技术—材料科学与工程]