掺镨GaN薄膜的微结构与光致发光  

Micro-structure and Photoluminescence Studies of Pr-implanted GaN

作　　者：宋淑芳[1] 陈维德[1] 张春光[1] 卞留芳[1] 许振嘉[1] 

机构地区：[1]中国科学院半导体研究所表面物理国家重点实验室,北京100083

出　　处：《发光学报》2005年第4期513-516,i0001,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金资助项目(60176025)

摘　　要：利用背散射/沟道(RBS/C)技术、原子力显微镜(AFM)和光致发光(PL)谱研究了掺镨GaN薄膜的微结构和可见光发光特性.RBS/C结果表明,注入Pr后,在注入层引入了晶格损伤;注入样品经1 050℃退火后,部分损伤得到恢复,但是晶体质量没有恢复到注入前的状态.AFM结果表明,注入Pr后,表面凹凸不平,而且在注入区引起了膨胀,膨胀幅度达到23.368 nm左右.PL结果表明,在850～1 050℃退火,发光强度按e指数增加;当退火温度达到1 050℃,发光强度最强,经过数据拟合可得Pr3+的热激活能为5.8 eV.Recently, Pr-doped GaN has been attracting much interest because of its potential applications in optical communications and full color displays. Pr-doped GaN can produce IR emission at 1.3 μm and visible red emission at 650 nm. Pr ions are usually introduced into GaN either during growth process or by ion implantation. As we know that ion implantation doping has a lot of advantages, such as the selective doping of certain areas on the sample, the introduction of a large number of elements, and precise control of dopant concentration and depth distribution. It is necessary to anneal in order to achieve electrically or optically active doping and remove the damages induced by ion implantation. The micro-structure and photolumineseenee （PL） properties of Pr-implanted GaN thin films have been experimental results indicate that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1 050℃. The thermal activation energy Ea is 5.8 eV by data fitting.

关 键 词：GAN PR 背散射/沟道技术 光致发光 

分 类 号：O472[理学—半导体物理] O482.31[理学—物理]