太空生长掺Te-GaAs单晶的结构缺陷观测  

Observation of Structure Defects in Doped-Te GaAs Single Crystal Grown in Space

作　　者：蒋四南[1] 范缇文[1] 李成基[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1989年第1期76-84,共9页半导体学报（英文版）

摘　　要：本文用X射线、电子显微镜和电子束阴极荧光方法,对在太空中生长的掺Te-GaAs单晶材料的结构完整性进行了实验研究.在地面生长的掺Te-GaAs有明显的杂质条纹,而在太空生长的晶体杂质条纹消失;在太空和地面生长的交界处于空间材料一侧的中心部位,存在一个大约5μm宽的高完整区.远离中心部位,空间材料的完整性降低,出现了大量位错并伴有微缺陷.实验结果表明:在微重力条件下生长化合物半导体GaAs对在其中的杂质均匀分布有利.在太生长时出现的大量位错和微缺陷,并不是在生长时由于失重所致,而是在太空生长时温度失控所引起的.The structure perfection of Te-doped GaAs single crystal grown in space has been in-verstigated by X-ray diffraction,TEM and cathodoluminescence. X-ray topography showedthat grown striations appeared in the crystal grown on the ground, but it disappeared in thespace grown crystal.There was about 5-30μm-wide a defect-free zone near the interfacebetween the crystals grown on the ground and that grown in the space.It was showed thatthe structure perfection of GaAs single crystal grown in space decreased from centre to edgeside step by step and disloctions and microdefects appeared.The experimental results evi-denced that the impurity distribution in the space-grown crystal was more homogeneousthan in the ground-grown one More disloctions and more microdefects did not caused byaction of microgravity, but resulted from the fact that the temperature was not well control-led during the crystal growth in space.

关 键 词：GAAS 太空生长 位错 微缺陷 

分 类 号：TN305.3[电子电信—物理电子学]