Pt-Si界面的椭偏光谱响应及PtSi的光学性质  

Spectroellipsometric Response of Pt-Si Interface and Optical Properties of Silicide PtSi

作　　者：陈土培 黄炳忠[1] 

机构地区：[1]中山大学物理系

出　　处：《Journal of Semiconductors》1989年第1期24-30,共7页半导体学报（英文版）

摘　　要：本工作利用椭偏光谱法研究Pt-Si系统的界面状况,结果指出,未经任何热处理的Pt/n-Si样品的界面上存在着一性质上异于Si衬底和Pt膜的界面层,但经700℃退火(固相反应)形成硅化物PtSi后,原来的界面层消失.另外,由椭偏光谱测量,本工作获得了PtSi薄膜的光学性质,这些光学性质可由Lorentz-Drude模型而得到比较好的解释,该模型包含了三项具有不同的共振能量的束缚电子项及一项自由电子项的贡献.The interface of Pt-Si system has been investigated by spectroscopic ellipsometry.Theresults show that there is an interface layer at the interface of unannealed Pt/n-Si(111) sam-ples, but this interface layer disappears after the formation of silicide PtSi in the heating treat-ment at 700℃.The optical properties of silicide PtSi are also reported demonstrating thatthe optical properties canbe described by Lorentz-Drude model with one free-electron term andthree different bound-electron terms.

关 键 词：椭偏光谱法 界面 硅化物 光学性质 

分 类 号：TN301[电子电信—物理电子学]