Au、Al/a-Si:H热退火行为研究  

Study on Thermal Annealing Behaviors of Au、Al/a-Si:H Systems

作　　者：金澍 刘洪图[1] 赵特秀[1] 吴志强[1] 沈波[1] 许振嘉[2] 

机构地区：[1]中国科学技术大学物理系 [2]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1989年第3期186-191,共6页半导体学报（英文版）

基　　金：中国科学技术大学结构分析中心赞助

摘　　要：本文借助改进的干涉增强喇曼散射技术、AES分析和高温金相显微镜在位观察研究了Au、Al/a-Si∶H系统的真空热退火行为.发现受金属复盖的a-Si∶H的晶化温度和其激活能均比未复盖的a-Si∶H要低得多;a-Si∶H上的Al-Si互溶温度也比C-Si上的低,并且该互溶作用在350℃退火后加剧;Al诱导的a-Si∶H晶化后,在表面上有一连续的低阻Si(Al)析出层,它可Al/a-Si∶H的肖特基结转为欧姆结.The vacuum-annealing behaviors of Au,Al/a-Si:H systems have been investigated by meansof the improved IERS technique,AES analysis and high temperature metalography in site ob-servation.It is found that the crystalization temperature and activation energy of metal-cover-ed a-Si:H are much lower than those of non-covered a-Si: H; Al-Si intermixing temperaturefor Al/a-Si: H is also lower than that for Al/c-Si, and the intermixing action will increaseafter annealing at above 350℃;After Al-induced crystalization of a-Si:H, a continued low-resistence segregated Si(Al) layer will exist at the surface,Thus enabling the Schottky barrierjunction to become ohmic contact for Al/a-Si: H.

关 键 词：非晶硅 金属诱导晶化 热退火 

分 类 号：TN301[电子电信—物理电子学]