激光等离子体淀积硅薄膜过程动力学研究  

Study on Kinetic Process of Silicon Film Deposited by Laser Plasma

作　　者：董丽芳[1] 傅广生[1] 李晓苇[1] 韩理[1] 张连水[1] 吕福润 

机构地区：[1]河北大学物理系

出　　处：《Journal of Semiconductors》1989年第4期280-285,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：采用强TEA CO_2脉冲激光辐照SiH_4/H_2系统,对SiH_4激光等离子体淀积硅膜进行了研究,测量了膜淀积及膜性能随淀积条件的变化关系.同时采用光学发射光谱、光声激光偏转方法对其基本的微观和宏观动力学过程进行了研究,在此基础上初步建立了膜淀积的物理模型,计算了膜淀积速率、膜面积等,结果与实验符合得较好.The process of film deposition by laser plasma is studied.The energy of laser,gas pres-sure and temperature of substrate dependence of deposition rate are measured.At the same timethe basic kinetic process in deposition is studied by OES and OLDI. Finally, the model of de-position is suggested based on the experiment results.

关 键 词：激光 等离子体 淀积 硅薄膜 动力学 

分 类 号：TN304.12[电子电信—物理电子学]