原子力显微镜观察硅外延片的表面白雾缺陷  

Characterization of Chemical Vapour EpitaxialSi Wafers by Atomic Force Microscope

作　　者：吴敬文[1] 陆祖宏[1] 韦钰[1] 朱伟民[1] 

机构地区：[1]东南大学分子与生物分子电子学实验室,中国华晶电子集团公司支援中心

出　　处：《微电子学》1995年第4期48-50,共3页Microelectronics

摘　　要：本文利用原子力显微镜表征硅气相外延生长的白雾片和正常片。实验证明，白雾片是由许多高低起伏很大的颗粒构成的。而正常片的高低起伏很小，一定范围内无颗粒状结构。该实验清楚表明，形成白雾的原因是高低起伏的颗粒的光漫反射。Both clouded and normal wafers grownbychemical vapour epitaxy are characterized with atomic force microscope(AFM),and results are compared. Experiments show that clouds of the epitaxial wafers consist of numerous blg and small particulates iwhile the normal wafers have a smooth surface with Only small particulates,and even no particulates in some areas. It is concluded that the clouds are caused by optical diffuse reflection from the rising and falling partlculates。

关 键 词：原子力显微镜 硅 气相外延生长 硅片表征 

分 类 号：TN304.12[电子电信—物理电子学] TN304.054