HBr反应离子刻蚀硅深槽  

Reactive Ion Etching of silicon Trench With HBr

作　　者：刘家璐[1] 张廷庆[1] 刘华预[1] 王清平[1] 叶兴耀[1] 

机构地区：[1]西安电子科技大学,电子工业部第24研究所

出　　处：《微电子学》1995年第4期39-44,共6页Microelectronics

摘　　要：对ＨＢｒ反应离子刘蚀硅和ＳｉＯ＿２进行了实验研究。介绍了ＨＢｒ等离子体的刻蚀特性，讨论了ＨＢｒ反应离子刻蚀硅的刻蚀机理，研究了ＨＢｒ中微量氧、碳对ＨＢｒＲＩＥ刻蚀过程的影响。实验表明，ＨＢｒ是一种刻蚀硅深槽理想的含原子溴反应气体。采用ＨＢｒＲＩＥ，可获得高选择比（对Ｓｉ／ＳｉＯ＿２）和良好的各向异性。An experiment was conducted on reactive ion etching(RIE)of Si/SiO_2 with HBr.The etching behavior of HBr plasma and the mechanism of RIE with HBr are investigated in the paper. Also studied is the effect of trace impurities,such as O_2 and C,on the HBr RIE process. The exper-iment indicates that HBr is an ideal bromine containing reactive gas for etching of silicon trench.Both high selectivity (to Si/SiO_2)and excellent anisotropy can be obtained for trench etching by usingHBrRIE.

关 键 词：反应离子刻蚀 硅槽刻蚀 集成电路 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]