Si在SF_6＋N_2中反应离子刻蚀及其剖面的研究  

STUDY ON REACTIVE ION ETCHING OF Si WITH SF_6+N_2 AND ITS PROFILE

作　　者：程美乔[1] 周帆[1] 赵长威 

机构地区：[1]国家光电子工艺中心,中国科学院半导体研究所

出　　处：《微细加工技术》1995年第1期15-20,共6页Microfabrication Technology

摘　　要：本文报导了用ＳＦ＿６＋Ｎ＿２混合气体反应离子刻蚀Ｓｉ及其剖面的实验结果，研究了在刻蚀时，混合气体的成份和射频功率密度对Ｓｉ的蚀速影响以及Ｓｉ的负载效应，通过实验得到了一种获得Ｓｉ的腐蚀垂直剖面的方法，该腐蚀技术在制作微机械马达和周期为４６６．８ｎｍ的二级光栅（线宽０．２μｍ）中得到应用。The experiments on a reactive ion etching(RIE)of silicon by using SF_6+N_2 mixed gas as an etchan and it'S etching profile were reporfed,The relationsof etch rate of Si to gas composition,RF power density and loading effect ofSi were studied.A unique processing technique was obtained through parame- ters optimizing for vertical sidewall etching. The etching technique has been successfully applied to the fabrications of micromotors and high quality 2nd-order holographic gratings with periods of 466.8nm.

关 键 词：反应离子刻蚀 腐蚀剖面 硅 混合气体 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]