弹道电子发射显微镜对Au/n-Si(100)界面势垒的探测  

BALLISTIC ELECTRON EMISSION SPECTROSCOPY OF Au/Si(100) INTERFACE

作　　者：白春礼[1] 郭仪[1] 

机构地区：[1]中国科学院化学研究所,北京100080

出　　处：《物理学报》1995年第1期133-136,共4页Acta Physica Sinica

基　　金：国家自然科学基金和中国科学院"八五"重大项目资助的课题.

摘　　要：用弹道电子发射显微镜对Au/n-Si(100)界面势垒测试,直接得出定点的势垒特性和纳米尺度的界面图象.通过所测的I_(c)-V曲线,可得所测点的肖特基势垒高度及电荷传输特性.界面图象可以显示界面极小范围内势垒的特性.The Au/n-Si(100) interface system has been studied by the ballistic electron emission microscopy (BEEM). The barrier heights at different positions of the interface and interface images have been directly obtained with nanometer-scale resolution. Schottky barrier heights and electronic transmission properties of the interface are deduced from Ic-V curves. The BEEM images reveal the properties of barrier in very small regions at the interface.

关 键 词：BEEM 金属/半导体 界面 势垒 探测 金 硅 

分 类 号：O472.1[理学—半导体物理] TN16[理学—物理]