用Raman光谱研究掺氧多晶硅的微结构  

Raman Spectra Studies of the Microstructure of Oxygen-Doped Polysilicon

作　　者：王云珍[1] 潘尧令 

机构地区：[1]华东师范大学电子科学技术系

出　　处：《Journal of Semiconductors》1989年第7期534-537,共4页半导体学报（英文版）

摘　　要：本文用Raman谱特征和Raman峰强度的变化,揭示掺氧多晶硅(SIPOS)的微结构:对于各种氧含量(从8％到38％)的SIPOS生长膜是一种无序结构,其中元素Si呈无定形相.高温(T>900℃)热退火后,薄膜经历了一个再结晶过程,并出现了微晶区,Si微晶尺寸随退火温度的提高而增大.膜中氧浓度增加对微晶生长有抑制作用,故膜中氧含量增加将使Si晶粒度减小,或者相应的使薄膜再结晶的温度提高.A Study on Raman characteristic spectrum and the intensity of Raman peak is given to pre-sent the microstructure of SIPOS film:The as-deposited films are amorphous and have amor-phous phase of si when its oxygen content changes from 8% to 38%. Annealing at high tempe-rature T>900℃, films go through recrystallization and then silicon crystallites appear in thefilms.The sizes of the crystallites increase as the annealing temperature elevates.The inc-rease of oxygen concentration suppresses the growth of crystallites,so the higher the oxygencontent, the smaller the crystallites are, and the higher the re-structure temperature.

关 键 词：喇曼光谱 掺氧多晶硅 结构 粒度 

分 类 号：TN303[电子电信—物理电子学]