NMOS短沟DD结构热载流子效应的研究  

Study of Hot-Carrier Effect in Short Channel DD MOSFET

作　　者：杨肇敏[1] 徐葭生[1] 

机构地区：[1]清华大学微电子学研究所

出　　处：《Journal of Semiconductors》1989年第7期489-496,共8页半导体学报（英文版）

基　　金：电子工业部应用基础基金

摘　　要：本文描述制作和研究有效沟长为1μm的砷-磷双注入NMOS管(简称DD管).用工艺模拟和器件模拟程序计算和优化了工艺.实验结果与模拟结果完全一致,说明在相同有效沟道长度下DD结构比普通NMOS管的热载流子效应小.As-P double ion-implanted N-MOSFET's with 1 μm effctive channel length were fabricat-ed and investigated.By using process and device simulations, the process was computed and op-timized.The simulations are in good agreement with the experiment. The results showed thathot-carrier effects in DD MOSFET's are weaker than normal ones which have the effctivechannel length as former.

关 键 词：短沟 MOS管 热载流子效应 NMOS 

分 类 号：TN432[电子电信—微电子学与固体电子学]