双多晶硅自对准结构双极型晶体管工作于饱和开关特性的解析模型（Ⅰ）  

The Analytical Model of Switching Properties for Double Polysilicon Self-aligned Structure Bipolar Transistors Operating in Saturaton

作　　者：乐中道[1] 龙忠琪[1] 

机构地区：[1]浙江工业大学电子工程系

出　　处：《浙江工业大学学报》1995年第2期114-124,共11页Journal of Zhejiang University of Technology

基　　金：国家自然科学基金

摘　　要：我们拟采用最基本参数，饱和时间常数，和与此相关的半导体物理机理来分析双多晶硅自对准结构双极型晶体管工作于饱和的行为。全文分上、下二篇分别发表。本文为上篇，文中给出了在基区中正态模和逆向模的涉动电流和存贮电荷以及收集极外延层中的涉动电流和存贮电荷的解析分析；把它们表示成收集极传导电流Ｉｃ和收集极与基极之间电位差ＶＣＢ的函数。为在下篇中提出一个严格的解析模型提供理论基础。The behaviour of double polysilicoll self-aligned structure bipolar transistors operating in sattlration would be analized by using the most fundamental parameter, saturation time constant, and correlated semiconductor physical mechanism. The whole content is divided into two parts and published separately. This paper is the first part in which the mobile currents and storage charges of normal and inverse modes in the base as well as in the epitaxial layer of the collector are analized and expressed as the ftlnction of the conductive collector Current Ic and tile voltage between collector and base vCB. Thus. the theoretical basis is provided for the second part where a strict analytical model is given.

关 键 词：多晶硅发射极 饱和开关特性 晶体管 解析模型 

分 类 号：TN325.2[电子电信—物理电子学]