X射线镂空硅掩模在同步辐射X射线深层光刻中的应用  

APPLICATION OF X-RAY STENCIL SILICON MASK IN SYNCHROTRON RADIATION X-RAY DEEP LITHOGRAPHY

作　　者：孙宝银[1] 陈梦真[1] 朱樟震[2] 伊福廷[2] 

机构地区：[1]中国科学院微电子中心,北京100010 [2]中国科学院高能物理研究所,北京100039

出　　处：《真空科学与技术》1995年第3期176-178,共3页Vacuum Science and Technology

摘　　要：阐述了X射线镂空硅掩模的研制及其在同步辐射深层光刻中的应用。在北京同步辐射国家实验室X射线光刻装置上，采用本文研制的X射线镂空硅掩模获得胶厚为30～40μm、侧壁很陡、边缘很直的X射线深层光刻胶图形。The fabrication of X-ray stencil silicon mask and its application in X-ray deep lithography are presented in this paper. Special X-ray stencil silicon mask with excellent patterns of high contrast for shorter wavelength soft X-ray has been developed in our laboratory, which is found to be suitable for X-ray deep lithography experiments. Using such kind of X-ray stencil silicon mask,structured patterns of resist as thicker than 30μm with vertical side-walls and good edge profile have been obtained on the X-ray lithography appara- tus of the Beijing synchrotron radiation facility, BEPC national laboratory.

关 键 词：镂空硅掩模 X射线 深层光刻 同步辐射 

分 类 号：TN304.12[电子电信—物理电子学] TN305.7