用于半导体器件瞬态特性研究的大幅度矩形纳秒脉冲发生器  

A Large-Amplitude Rectangular Nanosecond Pulse Generator for Investigation of the Transient Characteristics of Semiconductor Devices

作　　者：周旋[1] 鲍秉乾 李强 李锦林[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1989年第9期688-692,共5页半导体学报（英文版）

摘　　要：本文提出了一个用于半导体激光器和其他高速器件瞬态特性研究的大幅度矩形纳秒脉冲发生器的设计.为了产生一对极性相反的高速同步脉冲,在设计中采用了我国发明的新功能器件──双向负阻晶体管(BNRT).为了获得高速大电流主脉冲输出,采用了同时触发的双雪崩晶体管串联组合电路.所研制的发生器的主脉冲输出,其电压幅度高达200V(在50Ω负载)、峰值电流为4A、上升时间约2ns、宽度5-100ns、晃动小于50ps.而且输出脉冲波形呈良好的矩形,其过冲和顶部不平坦度均小于±3％.A large-amplitude rectangular nanosecond pulse generator is designed specifically for tes-ting the transient switching characteristics of semiconductor lasers and other high-speed devi-ces.The main output pulses of the developed generator have amplitudes as high as 200 V(into a 50 Ω load), peak currents up to 4 A, a rise time of about 2ns, pulse widths in therange of 5 to 100 ns, and a jitter of less than 50 ps.Moreover, the output pulse waveformsare good rectangular, their overshoot and top aberration are both less than ±3% of amplitu-de.

关 键 词：半导体器件 开关特性 脉冲发生器 

分 类 号：TN782[电子电信—电路与系统]