氢气放电无窗输出型光CVD非晶、微晶硅薄膜  

Growth of Amorphous and Microcrystal Silicon Films by H_2 Discharge Windowless Photo-CVD

作　　者：郭述文[1] 朱基千[2] 谭淞生[2] 王渭源[2] 

机构地区：[1]江西大学物理系 [2]中国科学院上海冶金研究所

出　　处：《Journal of Semiconductors》1989年第10期769-774,共6页半导体学报（英文版）

基　　金：中国科学院传感技术联合开放实验室资助

摘　　要：采用氢气作为无窗输出型真空紫外辐射源的工作气体,产生的高能光子(如真空紫外光)可以直接分解SiH_4或SiH_4+BF_3混合气体,以制备氢化非晶硅(a-Si∶H)和掺硼氟化微晶硅(μc-Si∶F∶H(B))薄膜.测量表明,薄膜具有类似于通常辉光放电或汞敏化紫外光CVD制备的薄膜的结构和电学特性,掺氟化硼后晶化温度可低至200℃.文中对真空紫外光CVD的光解机理以及薄膜的特性进行了初步的探讨.Hydrogenated amorphous silicon and flourine-hydrogenated boron doped microcrystallinesilicon films were prepared in direct excitation process by hydrogen gas discharge in windo-wless vacuum ultraviolet (VUV) radiation source.It is shown that the structure and electronicproperties of the films are very similar to that of the films deposited by usual methods.The growth temperature of the films is as low as 200℃.The photolytic chemical mechanismsin direct VUV photo-CVD and the physical properties of the films have been preliminarilydiscussed.

关 键 词：无窗输出 CVD 硅 薄膜 

分 类 号：TN304.055[电子电信—物理电子学]