基于固体开关器件的新型高压脉冲驱动源  

New high-voltage pulse driving source based on solid switch device

作　　者：陈静[1] 周晓青[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《现代电子技术》2012年第4期208-210,共3页Modern Electronics Technique

摘　　要：从MOSFET的开关基理,以仿真与电路实验相结合的方法,研究出了MOSFET栅极的"过"驱动技术,以此来提高MOSFET的开关速度。并结合多个MOSFET的串并联的级联技术,采用多管串联方法来提高脉冲源的输出脉冲幅度,采用多管并联方法来提高脉冲源的其输出脉冲功率,从而得到较大的脉冲宽度。在此研制出了输出脉冲幅度大于4kV、前沿小于10ns、脉冲宽度大于100ns的高压快脉冲源。The the circuit of the pulse source is introduced briefly.The switch theory of the power MOSFET is expatiated emphatically.The overdriving technique of the power MOSFET grid is investigated to improve the switch speed of the power MOSFET by simulation and experiments.Power MOSFET is used as a switch element in the technology.The ways of improving the output power of the pulse source are analyzed through integrating the techniques of several power MOSFETs in series or in parallel.A high-voltage wide pulse source with the amplitude of output pulse larger than 4 kv,the rise time less than 10 ns and the pulse width wider than 100 ns was obtained.

关 键 词：过驱动 MOSFET 高压固体器件 高压宽脉冲 

分 类 号：TN3[电子电信—物理电子学]