锗掺杂二氧化硅膜的紫外光致折变  

UV Photoinduced Refractive Index Change in Ge-doped Silica Film

作　　者：张乐天[1] 王健[2] 郑杰[1] 李爱武[1] 钱颖[1] 郑伟[1] 张玉书[1] 

机构地区：[1]吉林大学集成光电子学国家重点实验室,长春130012 [2]吉林大学物理学院

出　　处：《吉林大学学报（工学版）》2005年第5期547-550,共4页Journal of Jilin University:Engineering and Technology Edition

基　　金："973"国家重点基础研究发展规划项目(G2000036602).

摘　　要：研究了用火焰水解法制备的掺锗二氧化硅膜在KrF紫外激光下曝光后的结构和光学性质的变化。经过10 m in的照射后,在1550 nm处的折射率变化大约为3.41×10-3。采用原子力显微镜分析了曝光过程及膜的表面形貌。结果表明:随着曝光时间的延长,膜的致密性增加,表面粗糙度下降,折射率增大。The influence of KrF excimer UV laser irradiation on the structural and optical properties of Gedoped flame hydrolysis deposited silica glass films was investigated. A maximum refractive index increase of about 3.41 × 10^-3 was obtained at approximately 1550 nm wavelength after 10 min irradiation. The irradiation process and surface morphology of the films were analyzed by atomic force microscopy （AFM）. Results show that with the increase of the irradiation time the density of the film increases while surface roughness decreases, and the refractive index increases.

关 键 词：材料失效与保护 锗硅 火焰水解法 KRF激光 折射率 

分 类 号：TN2[电子电信—物理电子学]