各向异性量子点单光子发射的高偏振度特性  

High polarization properties of single-photon emission from anisotropic InGaAs quantum dots

作　　者：周慧君[1] 程木田[1] 刘绍鼎[1] 王取泉[1,3] 詹明生[2] 薛其坤[3] 

机构地区：[1]武汉大学物理系,武汉430072 [2]中国科学院武汉物理与数学研究所,武汉430071 [3]中国科学院物理研究所,国际量子结构中心,北京100080

出　　处：《物理学报》2005年第9期4141-4145,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10344002和10474075)资助的课题.~~

摘　　要：研究了线偏振脉冲光场激发下,单个各向异性InGaAs量子点的高偏振光发射.给出其偏振因子与两个正交本征态之间的交叉弛豫之间的关系式.分析表明,交叉弛豫随激发场强度增大,并导致偏振因子随激发场入射脉冲面积减小.The high-polarized single-photon emission in single anisotropic InGaAs quantum dots excited by linear pulse excitation was discussed. The expression of the polarization and cress relaxation between two orthogonal eigenstates was given. It was revealed that the cress relaxation increased with intensity of the excitation, which resulted in the decrease of polarization factor with the input pulse area.

关 键 词：量子点 单光子发射 偏振度 各向异性 光子发射 INGAAS 交叉弛豫 激发 线偏振 关系式 

分 类 号：O471.1[理学—半导体物理]