GaN晶体中堆垛层错的高分辨电子显微像研究  

A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging

作　　者：万威[1] 唐春艳[1] 王玉梅[1] 李方华[1] 

机构地区：[1]中国科学院物理研究所,北京凝聚态物理国家实验室,北京100080

出　　处：《物理学报》2005年第9期4273-4278,共6页Acta Physica Sinica

摘　　要：借助高分辨电子显微像结合解卷处理的方法研究了GaN晶体中的堆垛层错.简要介绍了高分辨电子显微像的解卷处理原理,指出通过解卷处理可以把本来不直接反映待测晶体结构的高分辨电子显微像转换为直接反映晶体结构的图像.用高分辨电子显微像观察了GaN晶体中的堆垛层错,对高分辨电子显微像作了解卷处理.在解卷像上清晰可见缺陷核心的原子排列情况,据此确定了层错的类型.此外,还讨论了解卷处理在研究晶体缺陷中的效用.The stacking fault in crystals of GaN was studied by high-resolution electron microscope images in combination with image deconvolution. The principle of deconvolution for high-resolution electron microscope images is briefly introduced. It is demonstrated that an image originally does not intuitively reflect the examined crystal structure can be transformed into the structure image. The stacking faults in crystals of GaN were observed with the high-resolution microscope. The image deconvolution was performed for the image, and the atomic configuration in the defect core is seen clearly in the deconvoluted image. Based on this, the type of stacking fault has been determined. Besides, the effectiveness of image deconvolution in studying crystal defects is discussed.

关 键 词：GAN 晶体缺陷 高分辨电子显微学 解卷处理 电子显微像 晶体结构 堆垛层错 高分辨 处理原理 原子排列 

分 类 号：TN304[电子电信—物理电子学]