射频磁控溅射法生长Mg_xZn_(1-x)O薄膜的结构和光学特性  

Structural and optical properties of Mg_xZn_(1-x)O thin films deposited by radio frequency magnetron sputtering

作　　者：张锡健[1] 马洪磊[1] 王卿璞[1] 马瑾[1] 宗福建[1] 肖洪地[1] 计峰[1] 

机构地区：[1]山东大学物理与微电子学院,济南250100

出　　处：《物理学报》2005年第9期4309-4312,共4页Acta Physica Sinica

基　　金：教育部博士点基金(批准号:20020422056)资助的课题.~~

摘　　要：用射频磁控溅射法在80℃的衬底温度下制备出MgxZn1-xO(0≤x≤0.30)薄膜.x射线衍射(XRD)结果表明,MgxZn1-xO薄膜为单相六角纤锌矿结构,没有形成任何显著的MgO分离相,MgxZn1-xO薄膜的择优取向平行于与衬底垂直的c轴;c轴晶格常数随着Mg含量的增加逐渐减小.在MgxZn1-xO薄膜的光透射谱中出现锐利的吸收边,由透射谱估算出MgxZn1-xO薄膜的带隙宽度由3.32eV(x=0)线性地增加到3.96eV(x=0.30).MgxZn1-xO films（0≤x≤0.30） have been prepared on sapphire substrates by radio frequency magnetron sputtering at a substrate temperature of 80℃ . Optical and structural properties of the MgxZn1-xO films were studied using transmittance and x- ray diffraction （XRD）spectra. XRD patterns indicate that the MgxZn1-xO films have hexagonal wurtzite single-phase structure of ZnO and a preferred orientation with the c-axis perpendicular to the substrates without any significant formation of a separated MgO phase. The c-axis lattice constant of the MgxZn1-xO films decreases gradually with increasing Mg content. Sharp absorption edge appeared in the transmittance spectra of the MgxZn1-xO films, the fundamental band gap of the MgxZn1-xO films were estimated, which increases almost linearly from 3.32 eV at x = 0 to 3.96 eV at x = 0.30.

关 键 词：MgxZn1-xO薄膜 射频磁控溅射 Mg含量 纤锌矿结构 薄膜 光学特性 生长 衬底温度 光透射谱 X射线衍射 择优取向 

分 类 号：O484.4[理学—固体物理]