GaAs/Ga_(1-x)Al_xAs半导体量子阱光辐射-热离子制冷  

Opto-thermionic refrigeration of semiconductor heterostructure

作　　者：韩鹏[1] 金奎娟[1] 周岳亮[1] 周庆莉[1] 王旭[1] 赵嵩卿[1] 马中水[2] 

机构地区：[1]中国科学院物理研究所,北京凝聚态物理国家实验室,北京100080 [2]北京大学物理学院,北京100871

出　　处：《物理学报》2005年第9期4345-4349,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10274100)资助的课题.~~

摘　　要：采用数值计算方法分析了GaAsGa1-xAlxAs半导体量子阱的光辐射热离子制冷.以漂移扩散模型为基础,通过电流连续性方程和泊松方程自洽地计算出在外加正向偏压的条件下半导体内部的载流子分布情况,并在此基础上计算了阱内载流子的发光复合和俄歇复合,从而确定了半导体异质结量子阱光辐射热离子制冷的最优条件.进一步分析了不同Al组分的Ga1-xAlxAs材料以及不同的掺杂浓度对制冷效果的影响,为该领域的实验工作提供了极有价值的参考.Numerical method has been used to analyze the opto-thermionic refrigeration process of semiconductor heterostructure. Based on the drift-diffusion model, current continuity equation and Poisson equation are employed to calculate the distribution of carriers, the radiative recombination rate and the Auger recombination rate of the semiconductor. In addition, we have calculated the effect of the changing of barrier height and the doping density on the refrigeration rate. Thus the optimum conditions of optothermionic refrigeration have been obtained based on these results. This work is of great significance for guiding the experiment research in the future.

关 键 词：半导体异质结 光辐射 制冷 半导体量子阱 制冷效果 GAAS 热离子 数值计算方法 漂移-扩散模型 电流连续性方程 半导体异质结 

分 类 号：O471.1[理学—半导体物理] TN304.23[理学—物理]