关于GaN晶体生长助熔剂的研究  

A study on the fluxes of GaN crystal growth

作　　者：李杰[1] 王静芳[1] 李敏[1] 赵鑫[1] 

机构地区：[1]北京科技大学应用科学学院化学系,100083

出　　处：《中国科技信息》2005年第16A期11-11,30,共2页China Science and Technology Information

基　　金：国家自然科学基金资助课题(No.50304002)

摘　　要：宽带隙半导体GaN材料在光电子等方面有重要应用,采用Li3N与Ca同时作为助熔剂的熔盐法,可在温和条件下生长毫米级的GaN块单晶为避免助熔剂之间发生副反应,通过研究不同条件下Li3N与Ca的反应,应用X射线衍射分析技术对产物进行物相鉴定,探讨反应机理并归纳出生成LiCaN的影响因素,从而为GaN生长提供指导。A wide direct band gap semiconductor, GaN is currently considered as the most promising optoelectronic materials. A flux method using Li3N and Ga has successfully obtained GaN crystals in size of several millimeters under moderate conditions. In order to avoid the formation of by--product from the fluxes, the reactions of Li3N and Ca were studied, and then the products were determined by X ray diffraction analysis. The mechanism of the reactions and the impact factors were concluded.

关 键 词：宽带隙半导体 GAN材料 光电子 化学反应 晶体生长 

分 类 号：TN304[电子电信—物理电子学]