GaAlAs红外发光二极管1/f噪声研究  

Study of 1/f Noise in GaAlAs IREDs

作　　者：包军林[1] 庄奕琪[1] 杜磊[1] 马仲发[1] 李伟华[1] 万长兴[1] 

机构地区：[1]宽禁带半导体材料与器件教育部重点实验室

出　　处：《电子器件》2005年第3期497-499,504,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60276028);国防预研基金资助(51411040601DZ014);国防科技重点实验室基金资助(51433030103DZ01)

摘　　要：在宽范围偏置条件下,测量了GaAlAs红外发光二极管(IRLED)的低频噪声,发现1/f噪声幅值与偏置电流Irf的r次方成正比,在小电流区,r≈1,在大电流区r≈2。建立了一个GaAlAsIRLED的1/f噪声模型,得到与实验一致的定性结果。基于该模型的分析表明,低电流区GaAlAsIRLED的1/f噪声源于体陷阱对非平衡载流子俘获和发射导致的扩散电流涨落,高电流区的1/f噪声源于结空间电荷区附近氧化层陷阱对该处表面势的调制而引起载流子表面复合速率的涨落。该研究结果为1/f噪声表征GaAlAsIRLED的可靠性提供了实验基础与理论依据。1/f noise in GaAlAs infrared ray emitting diodes （IREDs） was measured in a widely bias range. Experimental results demonstrate that the magnitude of 1/f noise is in directly proportional to the power of the currentIF^γ, at small currentsγ≈1, at large currents γ≈2. A model for 1/f noise in GaAlAs IRED is developed and the results obtained agree well with experimental results. Based on this model, it is discussed that at small currents, 1/f noise in GaAlAs infrared ray emitting diodes comes from trapping and detrapping process between bulk defects and carriers, while, at large currents, it is due to fluctuations in the surface recombination velocity induced by the surface potential, which is modulated by oxide traps near the space-charge region. The work done above provides an experimental and theoretical basis for 1/f noise to be used in characterizing reliability of GaAlAs IREDs.

关 键 词：1/f噪声 红外发光二极管 涨落 氧化层陷阱 

分 类 号：TN36[电子电信—物理电子学] TN386.1