基于遗传算法的BSIM SOI模型参数提取  

Model Parameters Extraction of a BSIM SOI Model Based on the Genetic Algorithm

作　　者：李瑞贞[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2005年第8期1676-1680,共5页半导体学报（英文版）

摘　　要：提出了一种提取BSIMSOI模型参数的新方法,该方法基于遗传算法和局部优化法的结合,同时具有全局优化和局部优化的优点,提取的参数物理意义明确,并且容易得到全局最优解.该方法计算简单,不需要对模型进行深入了解和丰富的参数提取经验,易于推广使用.对用该方法得到的SOI模型进行了模拟,并将模拟结果与1.2μmCMOS/SOI测试结果进行对比,二者吻合很好,SOI器件特有的kink效应也得到了很好的拟合.A new method to extract model parameters of a BSIM SOI, which is based on the combination of the genetic algorithm and local optimization and has the advantages of both global optimization and local optimization, is presented. The extracted parameters have definite physical meaning, and it is easy to get the global optimization using this method. Computation is very simple using this method and it does not require an in-depth understanding of the model equation or a lot of experience with parameter extraction. Therefore, it can be conveniently used. Simulation work is done with parameters found by this method, and simulation results are compared with the measurement data of a 1.2μm CMOS/SOI. The simulation results fit the measurement data very well. The unique kink effect of SOI devices fits very well with the measurement data.

关 键 词：遗传算法 SOI 参数提取 

分 类 号：TN402[电子电信—微电子学与固体电子学]