平面型Gunn器件低温SiO_2和PSG的淀积  

Deposition of Silicon Dioxide at Low Temperature in Plane Type Gunn Domain Avalanche Device

作　　者：徐建成[1] 刘澎[1] 陈定钦[1] 

机构地区：[1]首都师范大学物理系,中央人民广播电台,中国科学院半导体研究所

出　　处：《分析测试技术与仪器》1996年第1期57-60,共4页Analysis and Testing Technology and Instruments

摘　　要：采用“夹层结构”的方法制作平面型Ｇｕｎｎ畴雪崩器件的ｎ型ＧａＡｓ外延材料，以及低温（４２０℃～４５０℃）淀积ＳｉＯ２的原理、工艺条件和可控硅电路．This paper describes the principle of silicon dioxide deposition at low premature(420℃-450℃)on n-type GaAs epituial material in a plane type Gunn domain avalanche device. The sandwich structure of silicon dioxide as Well as deposition technology are given.We have also shown the circuit diagram of controllable silicon and some relaied important results.

关 键 词：低温淀积 畴雪崩器件 二氧化硅 PSG淀积 

分 类 号：TN304.052[电子电信—物理电子学]