Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs （100） Vicinal Substrates  

作　　者：梁松 朱洪亮 潘教清 赵玲娟 王圩 

机构地区：[1]National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

出　　处：《Chinese Physics Letters》2005年第10期2692-2695,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60476009.

摘　　要：Thermal annealing effect on lnAs quantum dots grown on vicinal （100） GaAs substrates is studied in comparison with dots on exact （100） GaAs substrates. We find that annealing acts stronger effect on dots with vicinal substrates by greatly accelerating the degradation of material quality, as well as slightly increasing the blueshift of the emission wavelength and the narrowing of PL linewidth. It is attributed to the higher strain in the dots formed on the vicinal substrates.Thermal annealing effect on lnAs quantum dots grown on vicinal （100） GaAs substrates is studied in comparison with dots on exact （100） GaAs substrates. We find that annealing acts stronger effect on dots with vicinal substrates by greatly accelerating the degradation of material quality, as well as slightly increasing the blueshift of the emission wavelength and the narrowing of PL linewidth. It is attributed to the higher strain in the dots formed on the vicinal substrates.

关 键 词：EPITAXY LAYER GAAS LUMINESCENCE ISLANDS 

分 类 号：O43[机械工程—光学工程]