有限深量子阱中电子迁移率的压力效应  

Pressure Effect on Mobility of Electrons in Quantum Wells with Finite Barriers

作　　者：郝国栋[1] 班士良[1] 

机构地区：[1]内蒙古大学理工学院物理系,呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2005年第5期520-524,共5页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金资助项目(60166002);内蒙古自治区优秀学科带头人计划项目

摘　　要：考虑量子阱中局域类体光学声子模及界面光学声子模的影响,采用介电连续模型,运用力平衡方程研究GaAs/AlxGa1-xAs量子阱中声子模对电子迁移率影响随阱宽的变化关系及其压力效应.结果表明,在窄阱时迁移率主要受界面光学声子模的影响,随着阱宽的增加,局域类体光学声子模对迁移率的影响逐渐增加;两种声子模的散射作用均使电子迁移率随外加压力增加而减小,在窄阱时压力效应更加明显.The dielectric continuum phonon model and force balance equation are used to investigate the electron mobility in a single semiconductor quantum well by considering the influence of pressure effect and optical phonon modes （including the confined LO phonons and interface optical phonons）. The calculation is obtained numerically for a AlxGa1-xAs/GaAs quantum well system. It is found that the confined modes play an important role in wide quantum wells, but the interface modes are dominant in narrow quantum wells. The electron mobility, which is determined by confined phonon modes and interface phonon modes, respectively, decreases with pressure, and the contributions to the total mobility is more obvious for a narrow well.

关 键 词：量子阱 迁移率 压力效应 GAAS/ALXGA1-XAS 

分 类 号：O471.3[理学—半导体物理]