GaAs和ZnSe中极化子的压力效应  

Pressure Effect on Polarons in GaAs and ZnSe

作　　者：戈华[1,2] 班士良[1] 孟建英[1] 

机构地区：[1]内蒙古大学理工学院物理系 [2]集宁师范高等专科学校,内蒙古乌兰察布市012000

出　　处：《内蒙古大学学报（自然科学版）》2005年第5期525-531,共7页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金资助项目(60166002);内蒙古自治区优秀学科带头人计划项目

摘　　要：考虑电子发射和吸收多个虚声子对极化子的影响,计入压力效应,采用改进的线性组合算符法讨论极性晶体中的Ⅲ～Ⅴ族GaAs和Ⅱ～Ⅵ族ZnSe极化子的性质.在中间耦合极限下,数值计算得到了这两种极化子的耦合常数、自陷能、有效质量和围绕电子的平均虚声子数随外加压力的变化关系.结果表明:压力对Ⅱ～Ⅵ族材料的影响比较大.An improved linear combination operator method is used to investigate the properties of polarons in polar crystal Ⅲ-Ⅴ compound GaAs and Ⅱ-Ⅵ compound ZnSe by considering the pressure effect on electrons emitting or absorbing many virtual phonons. The relations among the electron-phonon interaction coupling constant, self-trapping energy, effective mass, average number of virtual phonons around an electron and pressure are obtained numerically for the two kinds of materials respectively. It is found that the pressure effect is relatively obvious for Ⅰ - Ⅵcompound materials.

关 键 词：极化子 压力效应 GAAS ZNSE 

分 类 号：O471.3[理学—半导体物理]