光导HgCdTe探测器电阻和性能的关系  

RELATIONSHIP BETWEEN RESISTANCE AND DETECTIVITY OF PHOTOCONDUCTIVE HgCdTe DETECTORS

作　　者：姚英[1] 梁宏林[1] 

机构地区：[1]昆明物理研究所

出　　处：《红外与毫米波学报》1996年第3期195-198,共4页Journal of Infrared and Millimeter Waves

摘　　要：为描述光导ＨｇＣｄＴｅ探测器低温与室温不同的导电机构，本文定义了一个易于测量的参数γ——液氮温度与室温电阻之比．实验结果表明：多数情况下。To describe different conductive mechanisms of PC HgCdTe detector at low temperature and room temperature,a parameter γ ,the ratio of the resistivity at liquid nitrogen temperature to that at room temperature was defined,which can be measured easily. The experiment results show that γ is closely correlated to the blackbody detectivity in most cases.

关 键 词：HGCDTE 光导探测器 器件电阻 红外探测 

分 类 号：TN204[电子电信—物理电子学]