用于扫描刻蚀加工的微小等离子体反应器的设计和实验  

Design and Experiments of Microplasma Reactor for Scanning Plasma Etching

作　　者：王海[1] 文莉[1] 褚家如[1] 

机构地区：[1]中国科学技术大学工程科学学院,合肥230027

出　　处：《纳米技术与精密工程》2005年第3期222-226,共5页Nanotechnology and Precision Engineering

基　　金：高等学校博士点学科点专项科研基金(20030358018).

摘　　要：提出了一种新的基于并行探针的扫描等离子体刻蚀加工方法,设计并研制了其中的核心器件——微小等离子体反应器,测量了该器件的伏安特性曲线,分析了其电学性能随工作气压和器件尺寸的变化规律,以及器件损坏的机制,实验结果表明,当放电气体为SF6,工作气压在2 000-6 000 Pa之间变化时,该器件能产生较为稳定的微等离子体,放电电压在390-445 V之间,功率密度在10-150 W/cm2之间,从而为进一步将其应用到扫描硅刻蚀加工提供可能。A new type of scanning plasma etching based on parallel probe actuation is introduced. The key device of scanning plasma etching microplasma device is designed and fabricated. The I-V curve of the device was measured, and the relations between electrical characteristics and gas pressure or device dimension are discussed. The result shows that stable microplasma can be generated, when the gas is 100% SF6, gas pressure range from 2 000--6 000 Pa, breakdown voltage between 390---445 V, power density between 10--150 W/ cm^2 , which could satisfy the requirement of future scanning plasma etching applications.

关 键 词：微机电系统 扫描刻蚀加工 微小等离子体反应器 伏安特性曲线 

分 类 号：TG669[金属学及工艺—金属切削加工及机床]