低温阳极键合技术研究  

Research on low temperature anodic bonding technique

作　　者：王多笑[1] 邬玉亭[1] 褚家如[1] 

机构地区：[1]中国科学技术大学精密机械及精密仪器系,安徽合肥230027

出　　处：《传感器技术》2005年第9期37-39,共3页Journal of Transducer Technology

摘　　要：通过键合温度220～250℃、键合电压400～600V的硅玻璃低温阳极键合实验,分析了温度和电场分别对键合强度和键合效率的影响,并讨论了键合机理.With the bonding temperature ranging from 220 - 250 ℃ and the bonding voltage ranging from 400 - 600 V,the effects of temperature and the applied voltage on the bonding strength and the bonding efficiency are analysed by low temperature silicon-glass anodic bonding experiments. The bonding mechanism is discussed.

关 键 词：低温 阳极键合 键合机理. 

分 类 号：TB42[一般工业技术]