高压VDMOS器件的SP ICE模型研究  

Research on SPICE Model of the High-voltage VDMOS

作　　者：赵野[1] 孙伟锋[1] 易扬波[1] 鲍嘉明[1] 时龙兴[1] 

机构地区：[1]东南大学国家ASIC系统工程技术研究中心,南京210096

出　　处：《固体电子学研究与进展》2005年第3期410-415,共6页Research & Progress of SSE

基　　金：国家高技术研究发展计划("863"计划)资助项目(No.2003AA1Z1400)

摘　　要：基于高压VDMOS器件的物理机理和特殊结构,对非均匀掺杂沟道、漂移区非线性电阻及非线性寄生电容效应进行分析,用多维非线性方程组描述了器件特性与各参数之间的关系,建立了精确的高压六角型元胞VDMOS器件三维物理模型,并用数值方法求解.基于该物理模型提出的等效电路,在SPICE中准确地模拟了高压VDMOS的特性,包括准饱和特性和瞬态特性.在全电压范围内(0～100 V),直流特性与测试结果、瞬态特性(频率≤5 MHz)与MEDICI模拟结果相差均在5%以内,能够满足HVIC CAD设计的需要.An accurate model for high-voltage VDMOS has been derived based on three-dimensional structure of hexagon cell. The model includes physical models for nonuniformly doped channel, non-linear drift region resistance and voltage-depending non-linear parasitical capacitances. That constitutes an implicit equations system solved by numerical method. Simultaneously, an equivalent circuit is also proposed and implemented in SPICE. This model exactly predicts the features such as both the unique quasi-saturation and transient. The veracity of the suggested model is verified by the experimental measurements and the MEDICI （DC error and transient error within 5%, over the voltage range 0-100 V, frequency.5 MHz）. This model can be used for HVIC CAD.

关 键 词：SPICE模型 高压集成电路 非均匀沟道 纵向双扩散金属氧化物半导体 漂移区 

分 类 号：TN710[电子电信—电路与系统]