新型SOI基3×3多模干涉波导光开关的优化设计  

Design and Optimization of a New Type 3×3 Silicon-on-Insulator Multimade Interference Optical Switch

作　　者：贾晓玲[1] 高凡[1] 张峰[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所离子束重点实验室,上海200050

出　　处：《光学学报》2005年第9期1208-1213,共6页Acta Optica Sinica

摘　　要：提出了一种基于SOI材料的新型3×3多模干涉(MMI)波导光开关,在开关的多模波导中引入折射率调制区,利用硅的等离子色散效应改变多模波导局部区域的折射率,使得光场在传输过程中的相位发生变化,进而确定输出光场位置,实现开关功能。采用有限差分光束传播法(FD-BPM)方法对开关的各个状态进行了模拟和分析,并对器件的结构参量进行了优化设计,采用优化后的结构参量,开关可实现的最大消光比达到-17.27 dB。In this paper, a new type 3 × 3 SOI multimode interference optical switch was presented. The indexmodulated regions were introduceed in the multimode waveguide with the plasma dispersion effect （PDF） of silicon to change the regional index of the multimode waveguide, the phase of the light field was modified to determine the position of the output light field. The various states of the switch were simulated and analyzed using the finite difference beam propagation method （FD-BPM）, the structure parameters of the switch was also designed and optimized. The peak extinction ratio of the switch reaches -17.27dB with the optimized structure parameters.

关 键 词：集成光学 多模干涉耦合器 光开关 SOI 全光网络 

分 类 号：TN256[电子电信—物理电子学]