Au/Zn/Au/p-InP欧姆接触的界面研究  

Investigation of the Interface of Au/Zn/Au/p-InP Ohmic Contact

作　　者：李萍[1] 刘诗嘉[1] 陈江峰[1] 庄春泉[1] 黄杨程[1] 张燕[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《半导体技术》2005年第10期11-14,共4页Semiconductor Technology

摘　　要：研究了离子束溅射制备的Au/Zn/Au/p-InP欧姆接触的界面特性。在480℃退火15s比接触电阻达到最小,为1.4×10-5Ω·cm2。利用俄歇电子能谱(AES)和X射线光电子能谱(XPS)研究了接触界面的冶金性质。实验结果表明,在室温下InP中的In就可以扩散到接触的表面,退火后可与Au形成合金。退火后,Zn的扩散可以在p-InP表面形成重掺杂层,从而降低接触势垒高度,减小势垒宽度,有助于欧姆接触的形成;在接触与p-InP的界面产生一个P聚集区,同时Au与InP反应生成Au2p3,其P的2p3/2电子的结合能约为129.2 eV。The interface property of Au/Zn/Au/p-InP ohmic contact fabricated by ion beam sputtering was studied. The specific contact resistance reaches the minimum value, i.e. 1.4×10^-5 Ω·cm^2, when the contact was annealed at 480℃ for 15s. TheAES andXPS were used to study the interface of the contacts. The experimental results indicate that In can diffuse to the surface of the contact at room temperature and form In-Au alloy after annealing. A heavily doped layer is induced near the surface of p- InP by Zn diffusion after annealing, which can reduce the barrier height and width of the contact and do good to the formation of ohmic contact. Moreover a P collective region is also produced at the interface of contact and p-InP where Au and InP compound Au2P3. The binding energy ofP 2p3 2 of Au2P3 is about 129.2 eV.

关 键 词：俄歇电子能谱 X射线光电子能谱 欧姆接触 界面 

分 类 号：TN305.93[电子电信—物理电子学]