用离子注入工艺改善Si/SiGe HBT高频噪声性能  

Improving the Noise Performances of Si/SiGe HBT via Ion Implantation Technology

作　　者：杨维明[1] 史辰[1] 徐晨[1] 陈建新[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100022

出　　处：《半导体技术》2005年第10期19-21,45,共4页Semiconductor Technology

基　　金：北京市自然科学基金资助项目(4032005)

摘　　要：常规工艺制作的SiGe/Si HBT高频噪声性能不理想的主要原因是其基极电阻较大,为减小基极电阻从而达到改善其高频噪声的目的,本文采用离子注入自对准工艺方法进行器件制作,并测试出器件的直流与最小噪声系数有显著改善。Bad noise performance of conventional device is mainly caused by the high base resistance. In order to reduce the base resistance for improving the noise feature, the ion implantation self-aligned process was taken. Then the direct current characteristics and the minimum noise coefficients of the devices were measured. The results indicate that the ion implantation technique can improve the noise performances of the device apparently.

关 键 词：离子注入 异质结双极晶体管 噪声系数 基极电阻 

分 类 号：TN385[电子电信—物理电子学] TN305.3