脉冲激光沉积法在Si(111)衬底上生长高c轴取向LiNbO_3薄膜  

Highly c-Axis Oriented LiNbO_3 Thin Film Directly Grown on Si(111) Substrate by Pulsed Laser Deposition

作　　者：曹亮亮[1] 叶志镇[1] 王新昌[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《真空科学与技术学报》2005年第3期211-213,221,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然基金重大研究规划项目赞助(No.90101009)

摘　　要：在氧压20Pa,衬底温度600℃,靶材与衬底距离4cm的最优化条件下,利用脉冲激光沉积(PLD)技术首次在无诱导电压和任何缓冲层的情况下,在单晶Si(111)衬底上生长具有优良结晶品质和高c轴取向的LiNbO3晶体薄膜。利用X射线衍射(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)对LiNbO3薄膜的结晶品质,择优取向性以及表面形貌进行了系统的分析。结果表明生长出了具有优异晶体质量的c轴取向LiNbO3薄膜,表面光滑平整且无裂纹产生,表面粗糙度约4.8nm,有利于硅基光电子器件的制备和利用。Highly c-axis oriented LiNbO3 thin film has been directly gorwn on Si（111） substrate for the first time by pulsed laser deposition（PLD） under the optimized conditions：an oxyen pressure of 20 Pa and a substrate temperature of 600℃ with on electric field and no buffer layer.The microstructures and surface morphology of the film were characterized with X-ray diffraction（XRD）,scanning electron microscopy（SEM）,and atomic force microscopy（AFM）,The results shou that the film has highly c-axis oriented texture and a mirror-like,crack-free surface with a rms roughness of less than 4.8nm.We suggest that the film be good enough for silicon based photoelectronic devices.

关 键 词：LINBO3 SI(111) C轴取向 脉冲激光沉积 

分 类 号：O484.4[理学—固体物理]