TbFe_x薄膜的成分控制及其对磁结构的影响  

Composition Control and its Influence to the Magnetic Structure of TbFe_x Film

作　　者：林黎蔚[1] 张万里[1] 张文旭[1] 蒋洪川[1] 彭斌[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《压电与声光》2005年第5期551-553,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(50271014)

摘　　要：利用直流磁控溅射工艺制备了T bF ex薄膜,通过改变溅射气压调节薄膜的成分,利用磁力显微镜研究了薄膜成分对畴结构的影响,最后从理论上讨论A r气压对磁致伸缩薄膜T bF ex成分的影响,并建立了理论模型。结果表明:A r气压在相当大的范围内影响着T bF ex膜的成分,当气压从0.2 Pa增加到0.6 Pa时,T b原子数百分比从30%增加到45%,磁力显微镜(M FM)观察到当T b含量减少时,在零场下的磁化强度由与膜面垂直方向变为平行于薄膜平面方向。In this paper, magnetostrictive film of TbF% is fabricated by the magnetron sputtering method. The influence of the film composition on the structure of the domain has been studied by the magnetic force microscopy （MFM） with the film composition variation by changing the Ar sputtering pressure. The influence of the argon pressure on the film compositions is studied theoretically and established the theory model. The results show that the argon pressure can influence the composition of the film in quite large range. When gas pressure increased from 0.2 Pa to 0. 6 Pa, the atomic contents of terbium can increase from 30% to 45%. And the magnetization under zero field will change from perpendicular to parallel to the film plane when the terbium content decreased which is indicated by the MFM.

关 键 词：磁致伸缩薄膜 磁控溅射 成分控制 磁畴 

分 类 号：TM271[一般工业技术—材料科学与工程]