Fabrication and Simulation of Silicon-on-Insulator Structure with Si_3N_4 as a Buried Insulator  

以Si3N4为埋层的SOI结构制备与器件模拟(英文)

作　　者：刘奇斌[1] 林青[2] 刘卫丽[1] 封松林[1] 宋志棠[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所半导体功能薄膜工程研究中心 [2]汉城大学电子工程与计算机科学学院

出　　处：《Journal of Semiconductors》2005年第9期1722-1726,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2003AA302720,2004AA302G20);上海纳米技术促进中心(批准号:0352nm016)资助项目~~

摘　　要：In order to minimize the self-heating effect of the classic SOI devices,SOI structures with Si3 N4 film as a buried insulator （SOSN） are successfully formed using epitaxial layer transfer technology for the first time. The new SOI structures are investigated with high-resolution cross-sectional transmission electron microscopy and spreading resistance profile. Experiment results show that the buried Si3 N4 layer is amorphous and the new SOI material has good structural and electrical properties. The output current characteristics and temperature distribution are simulated and compared to those of standard SOI MOSFETs. Furthermore, the channel temperature and negative differential resistance are reduced during high-temperature operation, suggesting that SOSN can effectively mitigate the selfheating penalty. The new SOI device has been verified in two-dimensional device simulation and indicated that the new structures can reduce device self-heating and increase drain current of the SOI MOSFET.为了减少经典SOI器件的自加热效应,首次成功地用外延方法制备以Si3N4薄膜为埋层的新结构SOSN,用HRTEM和SRP表征了SOI的新结构.实验结果显示,Si3N4层为非晶状态,新结构的SOSN具有良好的结构和电学性能.对传统SOI和新结构SOI的MOSFETs输出电流的输出特性和温度分布用TCAD仿真软件进行了模拟.模拟结果表明,新结构SOSN的MOSFET器件沟道温度和NDR效益都得到很大的降低,表明SOSN能够有效地克服自加热效应和提高MOSFET漏电流.

关 键 词：Si3 N4 new SOI structures self-heating effects 

分 类 号：TB43[一般工业技术]