应变异质结构中超薄中间层的应变协调作用  

Strain Accommodation of Ultra-Thin Buffer Layer in Strained Heterostructure

作　　者：陈涌海[1] 杨少延[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《Journal of Semiconductors》2005年第9期1740-1743,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:G2000068305)~~

摘　　要：用一个简单模型讨论了应变异质结构中嵌入中间层对界面失配位错产生和应变释放的影响.根据能量最小原理得到了弹性能最小状态下界面失配位错密度,发现当中间层材料的晶格常数比衬底和外延层的都大或者都小并且厚度足够薄时,超薄中间层可以完全吸收支撑衬底和外延层之间的应变而不产生任何界面失配位错,具有所谓无支撑衬底的应变协调作用.A simple model is presented to discuss the effect of ultra-thin buffer layer on the generation of misfit dislocations and strain relaxation in strained heterostructures. Based on the principle of minimum energy,the density of misfit dislocations at the interfaces can be obtained analytically. It is found that,when the lattice constant and the thickness of the ultra-thin buffer layer satisfy certain conditions,the ultra-thin layer can accommodate completely the misfit strain between the epilayer and the han- dling substrate without the generation of misfit dislocations at the interfaces.

关 键 词：应变异质外延结构 晶格失配 可协变衬底 失配位错 

分 类 号：TN305[电子电信—物理电子学]