退火对常压MOCVD法生长的高结晶性能ZnO薄膜发光特性的影响  

Influence of Annealing on Luminescent Properties of High Crystalline ZnO Thin Films Grown by Atmospheric Pressure MOCVD

作　　者：陈玉凤[1] 温战华[1] 王立[1] 戴江南[1] 方文卿[1] 江风益[1] 

机构地区：[1]南昌大学教育部发光材料与器件工程研究中心,江西南昌330047

出　　处：《发光学报》2005年第5期611-616,共6页Chinese Journal of Luminescence

基　　金：国家"863"计划纳米专项基金;电子信息产业发展基金(2003AA302160)资助项目

摘　　要：研究了氧气退火和氮气退火对ZnO薄膜发光特性的影响。ZnO膜是采用常压金属有机化学气相沉积(MOCVD)法在蓝宝石(0001)衬底上生长的。原生样品1有一很强的紫外峰及较强的绿光峰(525 nm附近);原生样品2有很强的紫外峰,深能级发光几乎观察不到。然后从不同原生膜上取两块小样品,分别在氧气和氮气中退火,退火温度是400,500,600,700,800℃。结果表明,在700℃以下退火,退火气氛对ZnO膜的深能级发光影响较大;超过700℃后,退火温度对ZnO薄膜的发光影响大,但退火气氛影响不太明显。通过退火对ZnO薄膜发光特性的影响,讨论了ZnO膜中525 nm附近绿光峰的起源。Annealing is important in semiconductor process. There are some reports on the annealing of ZnO film. Annealing can affect various properties of ZnO films, such as electrical property, optical property and crystalline property. But there still has no complete mechanism of the effects of annealing on properties of ZnO films. The deep-level green emission exists in ZnO films often, and the views on the origin of the green emission has no consistent. Aim to the situation, we systematically study the effects of oxygen and nitrogen annealing on luminescent property of high crystalline quality ZnO films grown on A12 03 （0001） by atmospheric pressure MOCVD. Two sets of small Sample 1 and Sample 2 cut off from ZnO as-grown films are used to be annealed in oxygen and nitrogen, respectively. There is a strong ultraviolet emission at 377 nm and a green emission at about 525 nm for Sample 1 and a strong ultraviolet emission at 377 nm for Sample 2. Then Sample 1 and Sample 2 are annealed for 1 h at 400, 500, 600, 700, 800 ℃ in sequence in-oxygen and nitrogen, respectively. After annealed for 1 h at every temperature, the luminescent property of every Sample was measured by excitation with 325 nm line of He-Cd laser. Research results show that the deep-level emission at 525 nm vanished as annealed at 500 ℃ in oxygen, but not disappeared as annealed at 500 ℃ in nitrogen. Above 700 ℃, there appeared a new green emission at about 500 nm for Sample 1 and Sample 2 whether annealed in oxygen or in nitrogen. Up to 800 ℃, the ultraviolet emission became very weak, the deep-level emission get very strong, and the peak position of deep-level emission become wider at about 500 - 525 nm. When all annealed Samples and as-grown Sample 1 were etched by ICP for 15 min, the deep level emissions at 525 nm and 500 - 525 nm vanished, and the ultraviolet emissions became very strong. These results show that there was large effect on deep-level emission of ZnO films by annealing ambience below 700 ℃ ; while exceeding to 700 ℃ , t

关 键 词：退火 薄膜 ZnO 金属有机化学气相沉积 绿光 

分 类 号：O472.3[理学—半导体物理]