(NH_4)_2S硫化后ZnS/InP界面的电学特性  

Electric Characterization of ZnS/InP Interface After(NH_4)_2S Sulfidation Treatment

作　　者：庄春泉[1] 汤英文[1] 黄杨程[1] 吕衍秋[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083

出　　处：《Journal of Semiconductors》2005年第10期1945-1948,共4页半导体学报（英文版）

摘　　要：在(NH4)2S硫化后的n-型InP衬底上热蒸发ZnS薄膜制得Au/ZnS/InP(100)MIS器件,测得了其IV特性曲线以及3MHz下的高频CV曲线和100Hz下的准静态CV曲线.从这些曲线得到如下结果:正向饱和电流为7×10-13A;ZnS钝化下经硫化的n-型InP表面的固定电荷密度为-2.28×1011/cm2;禁带中的最低表面态密度约为1×1012cm-2·eV-1.上述结果表明经硫化后的ZnS/InP界面具有良好的界面特性.An Au/ZnS/InP MIS diode is made through evaporating ZnS film on n-type InP,which is sulfided by （NH4）2S. The capacitance-voltage characteristics,both quasi-static and at 3MHz, and the current-voltage characteristics of the structure are measured. Using both the qusi-static and the high-frequency capacitance data, the interface defect density is calculated. It is shown that the minimum interface density is 1 ×10^12 cm^-2 · eV^-1 ;the fixed charge at the interface is -2.28× 10^11 cm^-2 ;the forward saturation current is 7 × 10^-13 A. All of these data indicate that the interface of ZnS/InP is improved through sulfidation treatment of InP before evaporating ZnS.

关 键 词：INP ZNS 硫化 MIS二极管 

分 类 号：TN304.23[电子电信—物理电子学]