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作 者:郑远 陈堂胜[1] 钱峰[1] 李拂晓[1] 邵凯[1]
出 处:《Journal of Semiconductors》2005年第10期1989-1994,共6页半导体学报(英文版)
摘 要:利用0.2μmGaAsPHEMT工艺实现了40Gb/s光接收机中的前置放大器.该放大器采用有源偏置的七级分布放大器结构,3dB带宽超过40GHz,输入输出反射损耗小于-10dB,跨阻增益为45.6dBΩ,最小等效输入噪声电流密度为22pA/Hz,功耗为300mW,可有效地应用于40Gb/s光接收机中.A preamplifier designed for a 40Gb/s optical receiver was developed by using 0.2μm GaAs PHEMT technology. A seven-unit distributed amplification structure with the active bias is employed for the preamplifier,where the 3dB bandwidth is beyond 40GHz,the return loss of either input or output end is less than -10dB, the transimpedance gain is approximately 45.6dBΩ,the minimum equivalent input noise current density is 22pA/√Hz, and the total power consumption is 300mW. All results show it is suitable for a 40Gb/s optical receiver.
分 类 号:TN722.71[电子电信—电路与系统]
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