用于40Gb/s光电子器件的新型低成本硅基过渡热沉  

A Novel Low-Cost Wideband Si-Based Submount for 40Gb/s Optoelectronic Devices

作　　者：熊兵[1] 王健[1] 蔡鹏飞[1] 田建柏[1] 孙长征[1] 罗毅[1] 

机构地区：[1]清华大学电子工程系集成光电子学国家重点实验室,北京100084

出　　处：《Journal of Semiconductors》2005年第10期2001-2005,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60244001;60223001和60290084);国家高技术研究发展计划(批准号:2001AA312190和2002AA31119Z);国家重点基础研究发展规划(批准号:G2000036601)资助项目~~

摘　　要：提出了一种新型低成本硅基过渡热沉,用以实现高达40Gb/s的高速光电子器件封装.采用高阻硅衬底作为热沉基底,制作出了0～40GHz范围内传输损耗小于0.165dB/mm的共面波导传输线.热沉中采用Ta2N薄膜电阻作为负载以实现器件的阻抗匹配,达到了0～40GHz范围内低于-18dB的宽带低反射特性.和传统硅基平台相比,新型硅基热沉更具有制作工艺简单、导热性能良好等优点.为了证明其实用性,热沉被应用于高速电吸收调制器的管芯级封装测试,获得了超过33GHz的小信号调制带宽特性,在硅基热沉上首次实现可用于40Gb/s系统的光电子器件.A novel low-cost wideband Si-based submount is proposed and fabricated for 40Gb/s optoelectronic devices. In the submount,a CPW transmission line is directly formed on a high-resistivity Si substrate and exhibits a transmission loss as low as 0. 165dB/mm up to 40GHz. The submount contains a Ta2 N thin-film resistor for impedance matching, and a low reflection coefficient of less than -18dB up to 40GHz is achieved. Such a configuration has the advantages of simplified fabrication procedures and efficient heat dissipation. As a demonstration,the Si-based submount is used in a high-speed electroabsorption （EA） modulator for chip-level packaging. The small-signal modulation bandwidth is measured to be over 33GHz,which is the first report of 40Gb/s optoelectronic devices on a Si-based submount.

关 键 词：宽带硅基过渡热沉 高速电吸收调制器 高阻率硅衬底 低损耗共面波导 薄膜电阻 

分 类 号：TN305.94[电子电信—物理电子学]