用室温红外透射谱研究Hg_（1－x）Cd_xTe外延薄膜的组份分布  

INVESTIGATION ON COMPOSITION PROFILE OF Hg 1- x Cd x Te EPILAYER BY ROOM TEMPERATURE INFRARED TRANSMISSION

作　　者：褚君浩[1] 李标[1] 刘坤[1] 汤定元[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《红外与毫米波学报》1996年第2期81-86,共6页Journal of Infrared and Millimeter Waves

摘　　要：根据Ｈｇ１－ｘＣｄｘＴｅ本征吸收系数的经验公式及Ｈｏｕｇｅｎ模型，建立了一种用室温红外透射谱研究Ｈｇ１－ｘＣｄｘＴｅ外延薄膜组份均匀性的方法，用这种方法检测了ＬＰＥ、ＭＢＥ、ＭＯＣＶＤ薄膜的组份分布。Based on the empirical rlues of intrinsic absorption coefficient in Hg 1- x Cd x Te and Hougen’s model,a useful method for determining the composition profile of an epitaxy layer from the room temperature infrared transmittance spectroscopy was established.The composition nonuniformity along the depth of Hg 1- x Cd x Te film samples grown by LPE, MOCVD and MBE techniques was figured out by using this method and compared with that from the second ion mass spectroscopy (SIMS) measurement.

关 键 词：红外透射谱 外延薄膜 HGCDTE 

分 类 号：TN213[电子电信—物理电子学] TN304.26