磁场下硅中硼受主的光热电离光谱  

PHOTOTHERMAL IONIZATION SPECTROSCOPY OF BORON ACCEPTOR IN Si UNDER MAGNETIC FIELD

作　　者：石晓红[1] 刘普霖[1] 陈张海[1] 史国良[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《红外与毫米波学报》1996年第2期98-102,共5页Journal of Infrared and Millimeter Waves

摘　　要：用光热电离光谱方法研究了硅中硼受主杂质能级在０～１１Ｔ磁场下的塞曼效应。观察到硅中硼受主激发态的塞曼分裂与移动。实验结果与讨论表明：由于价带的复杂性、浅受主的基态和激发态在磁场下简并的解除以及大的空穴有效质量。The Zeeman effect of B acceptor in Si was investigated with PTI technique under magnetic field up to 11T with B→∥K→∥(100) .The Zeeman splitting of the excited state for B in Si was observed.The experimental results and analysis show that the Zeeman effect of shallow acceptor is complicated as compared with that of shallow donor in Si due to the complicated valence band,large hole effective mass and the splittings of the ground state and excited state of acceptor.

关 键 词：光热电离光谱 浅受主 硅 半导体 

分 类 号：O472[理学—半导体物理]