磁隧穿振荡研究GaAs／AlAs双势垒结构中的Γ-X电子态混合  

Γ X MIXING IN GaAs/AlAs DOUBLE BARRIER STRUCTURES STUDIED BY MAGNETO TUNNELING OSCILLATIONS

作　　者：刘剑[1] 李月霞[1] 郑厚植[1] 杨富华[1] 宋爱民[1] 李承芳[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《红外与毫米波学报》1996年第2期113-117,共5页Journal of Infrared and Millimeter Waves

基　　金：国家攀登计划资助

摘　　要：报道了非对称ＧａＡｓ／ＡｌＡｓ双势垒结构（ＤＢＳ）中的Γ－Ｘ－Γ磁隧穿振荡现象，用磁场倒数周期求得ＡｌＡｓ层中Ｘ谷和ＧａＡｓ层中Γ谷之间的能带不连续值与通常公认值符合很好．X Γ magneto tunneling oscillations in asymmetrical GaAs/AlAs double barrier structures (DBS) were reported.The band offset between the X valley in AlAs barrier and the Γ valley in GaAs well given by the period in reciprocal field was found to be very close to the commonly adopted value.Owing to the well developed oscillatory feature,a new and sensitive experimental way to quantitatively study the Γ X coupling strength was provided.

关 键 词：磁隧穿 Γ-X混合 双势垒 砷化镓 砷化铝 

分 类 号：TN304.23[电子电信—物理电子学] O471.5[理学—半导体物理]