应用于无线电发射领域的第二代SiGe技术进展  

SiGe2 Technology Advance for the RF Application

作　　者：孙伟峰[1] 叶志镇[1] 赵炳辉[1] 朱丽萍[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《材料导报》2005年第11期24-27,共4页Materials Reports

基　　金：国家科技部攀登项目(981101040);浙江计划项目(991110535)

摘　　要：SiGe 1器件性能出色,在射频器件中的频率高达50GHz,已用于制造 GSM、DCS、GPS 中的 LNA、PA、DACs 和混频器等。为了满足将来产品更新换代和制造高尖端产品的需要,现在的一些公司(如 Atmel wireless andMicrocontrollers)已经发展了第二代 Si/SiGe 双极技术(SiGe2)。这种高性能的新技术可使发射区的宽度降到0.5μm,输运频率 f_T 和最大震荡频率 f_(max)达到90GHz 以上;5GHz 和20GHz 的最大稳定增益(MSG)分别为22dB 和11dB。SiGe 2技术能制造出应用更加广泛的各种器件,而0.5μm CMOS 技术还处于发展阶段。The excellent performances of SiGel have already lead to 50GHz, e.g. LNA,PA,DACs and mixers for GSM, DCS,GPS etc. To meet all requirements for future innovative, highly sophisticated products, atmel wireless and microcontroller（AWM）has developed a faster second generation of Si/SiGe bipolar technology（SiGe2）. This new high-performance technology with emitter widths down to 0.5μm allows transit frequencies fT and maximum frequencies of oscillation fmax of more than 90GHz. The maximum stable gain（MSG）at 5 GHz and the maximum available gain（MAG）at 20 GHz are 22dB and 11 dB, respectively. SiGe2 offers an extensive number of different devices, whereas the implementation of a 0. 5μm CMOS technology is at the development stage and will be available in near future.

关 键 词：SIGE 双极 CMOS 射频 MSG SI/SIGE 技术进展 第二代 发射区 应用 

分 类 号：TN431.2[电子电信—微电子学与固体电子学] TN322.8